 |
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
|
Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
IRF6710S2TR1PBF Datasheet(PDF) 1 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF6710S2TR1PBF Datasheet(HTML) 1 Page - International Rectifier |
|
|
1 / 10 page  www.irf.com 1 03/16/10 IRF6710S2TRPbF IRF6710S2TR1PbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) DirectFET ISOMETRIC S1 l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested Description The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.49mH, RG = 25Ω, IAS = 10A. Notes: 0 4 8 12 162024 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 VDS= 20V VDS= 13V ID= 10A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.8V 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 VGS, Gate-to-Source Voltage (V) 0 5 10 15 20 TJ = 25°C TJ = 125°C ID = 12A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 24 Max. 10 37 100 ±20 25 12 10 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 4.5m Ω@ 10V 9.0mΩ@ 4.5V S1 S2 SB M2 M4 L4 L6 L8 PD - 97124D |
Número de pieza similar - IRF6710S2TR1PBF |
|
Descripción similar - IRF6710S2TR1PBF |
|
|
|
Enlace URL |
| Política de Privacidad |
| ALLDATASHEET.ES |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Spanish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
