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IRF8721TRPbF-1 Datasheet(PDF) 7 Page - International Rectifier

No. de pieza IRF8721TRPbF-1
Descripción Electrónicos  HEXFETPower MOSFET
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF8721TRPbF-1 Datasheet(HTML) 7 Page - International Rectifier

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www.irf.com © 2013 International Rectifier
October 02, 2013
IRF8721PbF-1
D.U.T.
VDS
ID
IG
3mA
VGS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr


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