SST5911 / SST5912

CORPORATION

SYMBOL

CHARACTERISTCS

TYP

1

SST5912

UNIT

TEST CONDITIONS

MIN

MAX

STATIC

Gate-Source Breakdown Voltage

-35

-25

V

Gate-Source Cut off Voltage

-3.5

-1

-5

Saturation Drain Current

2

15

7

40

mA

Gate Reverse Current

-1

-100

pA

-0.2

nA

Gate Operating Current

-1

-100

pA

-0.2

nA

Gate-Source Voltage

-1.5

-0.3

-4

V

Gate-Source Forward Voltage

0.7

DYNAMIC

Common-Source Forward Transconductance

6

5

10

mS

f = 1kHz

Common-Source Output Conductance

20

100

µS

Common-Source Forward Transconductance

6

5

10

mS

f = 100MHz

Common-Source Output Conductance

30

150

µS

Common-Source Input Capacitance

3.5

5

pF

f = 1MHz

Common-Source Reverse Transfer Capacitance

1

1.2

Equivalent Input Noise Voltage

4

20

NF

Noise Figure

0.1

1

dB

Ω

SYMBOL

CHARACTERISTICS

SST5911

SST5912

UNITS

TEST CONDITIONS

MIN MAX MIN MAX

Differential Gate Current

20

20

nA

Saturation Drain Current Ratio

0.95

1

0.95

1

(Pulsewidth 300

µs, duty cycle ≤ 3%)

Differential Gate-Source Voltage

10

15

mV

∆T

Gate Source Voltage Differential Drift

20

40

20

40

Transconductance Ratio

0.95

1

0.95

1

f = 1kHz

NOTES: 1. For design aid only, not subject to production testing.

2. Pulse test; PW = 300

µs, duty cycle ≤ 3%.