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CAT28F512PI-15T Datasheet(PDF) 5 Page - Catalyst Semiconductor |
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CAT28F512PI-15T Datasheet(HTML) 5 Page - Catalyst Semiconductor |
5 / 14 page CAT28F512 5 Preliminary Doc. No. 25042-00 2/98 F-1 SUPPLY CHARACTERISTICS Limits Symbol Parameter Min Max. Unit VCC VCC Supply Voltage 4.5 5.5 V VPPL VPP During Read Operations 0 6.5 V VPPH VPP During Read/Erase/Program 11.4 12.6 V 5108 FHD F04 Note: (1) This parameter is tested initially and after a design or process change that affects the parameter. (2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer. (3) Input Rise and Fall Times (10% to 90%) < 10 ns. (4) Input Pulse Levels = 0.45V and 2.4V. (5) Input and Output Timing Reference = 0.8V and 2.0V. (6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid. 1.3V DEVICE UNDER TEST 1N914 3.3K CL = 100 pF OUT CL INCLUDES JIG CAPACITANCE A.C. CHARACTERISTICS, Read Operation VCC = +5V ±10%, unless otherwise specified. JEDEC Standard 28F512-90 28F512-12 28F512-15 Symbol Symbol Parameter Min. Max. Min. Max. Min. Max. Unit tAVAV tRC Read Cycle Time 90 120 150 ns tELQV tCE CE Access Time 90 120 150 ns tAVQV tACC Address Access Time 90 120 150 ns tGLQV tOE OE Access Time 35 50 55 ns tAXQX tOH Output Hold from Address OE/CE Change 0 0 0 ns tGLQX tOLZ(1)(6) OE to Output in Low-Z 0 0 0 ns tELQX tLZ(1)(6) CE to Output in Low-Z 0 0 0 ns tGHQZ tDF(1)(2) OE High to Output High-Z 20 30 35 ns tEHQZ tDF(1)(2) CE High to Output High-Z 30 40 45 ns tWHGL(1) - Write Recovery Time Before Read 6 6 6 µs INPUT PULSE LEVELS REFERENCE POINTS 2.0 V 0.8 V 2.4 V 0.45 V 5096 FHD F03 Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5) Figure 2. A.C. Testing Load Circuit (example) |
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