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2SC5339 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC5339 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5339 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=400mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A 5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.25A 1.3 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 71 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=5A ; VCE=5V 4 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 82 pF VF Diode forward voltage IF=5A 1.35 1.8 V fT Transition frequency IE=0.1A ; VCE=10V 2.4 MHz Switching times ts Storage time 4 6 µs tf Fall time ICP=5A;IB1(end) =1.1A fH=31.5kHz 0.2 0.5 µs |
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