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TIP141 Datasheet(Hoja de datos) 1 Page - Motorola, Inc

No. de Pieza. TIP141
Descripción  10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Descarga  6 Pages
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Fabricante  MOTOROLA [Motorola, Inc]
Página de inicio  http://www.freescale.com
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Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA
VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145
VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146
VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
MAXIMUM RATINGS
Rating
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak (1)
IC
10
15
Adc
Base Current — Continuous
IB
0.5
Adc
Total Device Dissipation
@ TC = 25_C
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
_C/W
Thermal Resistance, Case to Ambient
R
θJA
35.7
_C/W
(1) 5 ms,
v 10% Duty Cycle.
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
BASE
EMITTER
COLLECTOR
≈ 8.0 k
≈ 40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP140/D
© Motorola, Inc. 1995
TIP140
TIP141
TIP142
TIP145
TIP146
TIP147
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 100 VOLTS
125 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 340D–01




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