IRF9640STRLPBF datasheet(4/10 Pages) IRF

No. de pieza	IRF9640STRLPBF

Descripción Electrónicos	Power MOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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Document Number: 91087

4

S11-1052-Rev. D, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

2400

2000

1600

1200

0

400

800

100

101

- VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

91087_05

QG, Total Gate Charge (nC)

20

16

12

8

0

4

0

10

50

40

30

20

V

DS = - 40 V

V

DS = - 100 V

For test circuit

see figure 13

V

DS = - 160 V

91087_06

I

D = - 11 A

60

101

100

- VSD, Source-to-Drain Voltage (V)

1.0

5.0

4.0

3.0

2.0

25

°C

150

°C

V

GS = 0 V

91087_07

10-1

0.0

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

- VDS, Drain-to-Source Voltage (V)

T

C = 25 °C

T

J = 150 °C

Single Pulse

102

2

5

1

2

5

10

25

110

25

102

103

25

91087_08

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