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1N4148 Datasheet(PDF) 1 Page - Shanghai Lunsure Electronic Tech |
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1N4148 Datasheet(HTML) 1 Page - Shanghai Lunsure Electronic Tech |
1 / 3 page CE 1N4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-Melf case with the type designation LL4148 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units Reverse voltage VR 75 Volts Peak reverse voltage VRM 100 Volts Average rectified current, Half wave rectification with IAV 150 mA Resistive load at TA=25 and F 50Hz Surge forward current at t<1S and TJ=25 IFSM 500 mA Power dissipation at TA=25 Ptot 5001) mW Junction temperature TJ 175 Storage temperature range TSTG -65 to + 175 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Min. Typ. Max. Units Forward voltage VF 1 Volts Leakage current at VR=20V IR 25 nA at VR=75V IR 5 nA at VR=20V, TJ=150 IR 50 nA Junction capacitance at VR=VF=0V CJ 4 pF Voltage rise when switching ON tested with 50mA 2.5 Volts pulse Tp=0.1 S, Rise time<30 S, fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA, trr 4 ns VR=6V, RL=100 Thermal resistance junction to ambient R JA 350 K/W Rectification efficience at f=100MHz,VRF=2V 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Vfr Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 |
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