LMV301

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SNOS968A – MAY 2004 – REVISED MAY 2013

LMV301 Low Input Bias Current, 1.8V Op Amp w/ Rail-to-Rail Output

Check for Samples: LMV301

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FEATURES

DESCRIPTION

The LMV301 CMOS operational amplifier is ideal for

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Input Bias Current: 0.182 pA

single supply, low voltage operation with an ensured

•

Gain Bandwidth Product: 1 MHz

operating voltage range from 1.8V to 5V. The low

•

Supply Voltage at 1.8V: 1.8 to 5 V

input bias current of less than 0.182pA typical,

eliminates input voltage errors that may originate from

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Supply Current: 150 µA

small input signals. This makes the LMV301 ideal for

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Input Referred Voltage Noise at 1kHz:

electrometer applications requiring low input leakage

40nV/

√Hz

such as sensitive photodetection transimpedance

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DC Gain (600

Ω Load): 100 dB

amplifiers and sensor amplifiers. The LMV301 also

features a rail-to-rail output voltage swing in addition

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Output Voltage Range at 1.8V: 0.024 to 1.77 V

to a input common-mode range that includes ground.

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Input Common-Mode Voltage Range:

−0.3 to

The LMV301 will drive a 600

Ω resistive load and up

±1.2 V

to 1000pF capacitive load in unity gain follower

applications. The low supply voltage also makes the

APPLICATIONS

LMV301 well suited for portable two-cell battery

systems and single cell Li-Ion systems.

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Thermocouple Amplifiers

The LMV301 exhibits excellent speed-power ratio,

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Photo Current Amplifiers

achieving 1MHz at unity gain with low supply current.

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Transducer Amplifiers

The high DC gain of 100dB makes it ideal for other

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Sample and Hold Circuits

low frequency applications.

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Low Frequency Active Filters

The LMV301 is offered in a space saving SC70

package, which is only 2.0X2.1X1.0mm. It is also

similar to the LMV321 except the LMV301 has a

CMOS input.

Connection Diagram

Applications Circuit

Top View

Figure 2. Low Leakage Sample and Hold

Figure 1. SC70-5 Package

See Package Number DCK0005A

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

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PRODUCTION DATA information is current as of publication date.

Copyright © 2004–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.