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BTB826M3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTB826M3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 7 page CYStech Electronics Corp. Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date :2013.08.12 Page No. : 1/7 BTB826M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Features • Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Pb-free lead plating package Symbol Outline BTB826M3 SOT-89 B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Current (Pulse) ICP -6 (Note 1) A Power Dissipation Pd 0.5 W Power Dissipation Pd 2 (Note 2) W ESD susceptibility 8000 (Note 3 ) V Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw=10ms 2. When mounting on a 40 ×40 ×0.7 mm ceramic board. 3. Human body model, 1.5kΩ in series with 100pF |
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