CYStech Electronics Corp.

Spec. No. : C809L3

Issued Date : 2009.01.16

Revised Date:

Page:1/7

BTB9435L3

CYStek Product Specification

Low Vcesat PNP Epitaxial Planar Transistor

BTB9435L3

Features

• Excellent current gain characteristics

• RoHS compliant package

Symbol

Outline

SOT-223

E

C

B

C

BTB9435L3

E：Emitter

C：Collector

B：Base

°C)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-30

V

Emitter-Base Voltage

-6

V

-3

A

Collector Current

-5

(Note 1)

A

Pd(Ta=25 )

℃

Power Dissipation

Pd(Tc=25 )

℃

3

W

Thermal Resistance, junction to ambient

80

Thermal Resistance, junction to case

42

°C/W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note : 1. Single Pulse Pw 3

≦

00μs,Duty 2%

≦

.

2. When the collector of device is mounted on a FR-4 board with area of 1” sq(645 sq mm)