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UPA1774G-E1-A Datasheet(PDF) 4 Page - Renesas Technology Corp

No. de pieza UPA1774G-E1-A
Descripción Electrónicos  Old Company Name in Catalogs and Other Documents
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA1774G-E1-A Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet G15380EJ2V0DS
2
µµµµPA1774
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
−60 V, VGS = 0 V
−10
µA
Gate Leakage Current
IGSS
VGS =
m16 V, VDS = 0 V
m10
µA
Gate Cut-off Voltage
VGS(off)
VDS =
−10 V, ID = 1 mA
−1.5
−2.0
−2.5
V
Forward Transfer Admittance
| yfs |VDS =
−10 V, ID = −2.0 A
2.5
4.3
S
Drain to Source On-state Resistance
RDS(on)1
VGS =
−10 V, ID = −2.0 A
200
250
m
RDS(on)2
VGS =
−4.5 V, ID = −2.0 A
230
300
m
RDS(on)3
VGS =
−4.0 V, ID = −2.0 A
240
330
m
Input Capacitance
Ciss
VDS =
−10 V
420
pF
Output Capacitance
Coss
VGS = 0 V
80
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
30
pF
Turn-on Delay Time
td(on)
VDD =
−30 V, ID = −2.0 A
8
ns
Rise Time
tr
VGS =
−10 V
5
ns
Turn-off Delay Time
td(off)
RG = 0
35
ns
Fall Time
tf
8ns
Total Gate Charge
QG
VDD =
−48 V
10
nC
Gate to Source Charge
QGS
VGS =
−10 V
1.7
nC
Gate to Drain Charge
QGD
ID =
−2.8 A
2.2
nC
Body Diode Forward Voltage
VF(S-D)
IF = 2.8 A, VGS = 0 V
0.89
V
Reverse Recovery Time
trr
IF = 2.8 A, VGS = 0 V
45
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
µs65
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = –20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS (
−)
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS (
−)
10%
90%
10%
0
VDS (
−)
90%
90%
td(on)
tr
td(off)
tf
10%
τ
VDS
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG =
−2 mA
VGS


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