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1N1200 Datasheet(PDF) 1 Page - Digitron Semiconductors |
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1N1200 Datasheet(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 1N1199(A,B)-1N1206(A,B) SILICON POWER RECTIFIER MAXIMUM RATINGS Parameter Symbol 1N1199 1N1200 1N1201 1N1202 1N1203 1N1204 1N1205 1N1206 Peak reverse voltage VR 50V 100V 150V 200V 300V 400V 500V 600V Operating & storage temperature range TJ, Tstg -65 to +200°C Maximum thermal resistance R θJC 2.5°C/W junction to case Mounting torque 25-30 inch pounds Weight .16 ounces (5.0 grams) typical Add “R” to part numbers for reverse polarity. ELECTRICAL CHARACTERISTICS Parameter Symbol Value Test Condition Average forward current IF(AV) 12 Amps TC = 170°C, half-sine wave, RθJC = 2.5°C/W Maximum surge current IFSM 250 Amps 8.3ms, half-sine, TJ = 200°C Maximum I2t for fusing I2t 260 A2s Maximum peak forward voltage VFM 1.2 Volts IFM = 30A: TJ = 25°C* Maximum peak reverse current IRM 10 µA VRRM, TJ = 25°C Maximum peak reverse current IRM 1.0 mA VRRM, TJ = 150°C* Maximum recommended operating frequency 10 kHz • Pulse test: pulse width 300µsec. Duty cycle 2% MECHANICAL CHARACTERISTICS Case DO-4(R) Marking Alpha numeric Normal polarity Cathode is stud, reverse polarity = anode is stud Reverse polarity Anode is stud (add “R” suffix) DO-4(R) Inches Millimeters Min Max Min Max A - 0.078 - 1.981 B 0.422 0.453 10.719 11.506 C - 0.405 - 10.287 D - 0.800 - 20.320 E 0.420 0.440 10.668 11.176 F - 0.250 - 6.350 G - 0.424 - 10.770 H 0.066 - 1.676 - Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121127 |
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