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3N80 Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd

No. de pieza 3N80
Descripción Electrónicos  N-Channel Power MOSFET
Download  8 Pages
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Fabricante Electrónico  NELLSEMI [Nell Semiconductor Co., Ltd]
Página de inicio  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

3N80 Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
N-Channel Power MOSFET
Nell High Power Products
3N80 Series
(3A, 800Volts)
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
The Nell 3N80 is a three-terminal silicon
device with current conduction capability of 3A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
DESCRIPTION
Low reverse transfer capacitance
(C
= 23pF typical)
RSS
R
= 3.80Ω (typ.) @ V
= 10V
DS(ON)
GS
Ultra low gate charge(35nC max.)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
FEATURES
PRODUCT SUMMARY
I (A)
D
3
V
(V)
DSS
800
3.80 @ V
= 10V
GS
35
R
(Ω) (typ.)
DS(ON)
Q (nC) max.
G
D (Drain)
G
(Gate)
S (Source)
UNIT
V /ns
V
W(W/°C)
A
mJ
ºC
-55 to 150
VALUE
1.9
12
800
±30
3
800
100 (0.80)
2.0
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
T =25°C to 150°C
J
TEST CONDITIONS
R
=20KΩ
GS
T =25°C
C
T =100°C
C
Operation junction temperature
Storage temperature
Single pulse avalanche energy(Note 2)
PARAMETER
Pulsed Drain current(Note 1)
Continuous Drain Current
Peak diode recovery dv/dt(Note 3)
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
.
.
lbf in (N m)
300
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 150
Note:
1.
.
Repetitive rating: pulse width limited by junction temperature.
10 (1.1)
1.6mm from case
IAR
Avalanche current(Note 1)
10
T =25°C
C
2
.I
= 3A, V
= 50V, L = 50mH, R
= 27Ω, starting T =25°C.
AS
DD
GS
J
240
Repetitive avalanche energy(Note 1)
EAR
3
.I
3A, di/dt ≤ 100A/µs, V
≤ V
, starting T
=25°C.
SD
DD
(BR)DSS
J
Total power dissipation (Derate above 25°C)
I
=3A, R
=50Ω, V
=10V
AR
GS
GS
EAS
I
=3A, L=50mH
AS
www.nellsemi.com
Page 1 of 8
TO-220AB
(3
)
N80A
TO-220F
(3
)
N80AF
D
G
D
S
G
S
D
TO-220AB
TO-220F
3
54 (0.43)


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