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IRF830 Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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IRF830 Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 7 page SEMICONDUCTOR Nell High Power Products RoHS RoHS Fig.5 Typical capacitance vs. Drain-to-Source voltage Drain-to-Source voltage , VDS (V) Source-to-drain voltage, VSD (V) Fig.8 Maximum safe operating area Drain-to-Source voltage, VDS (volts) Case temperature, T (°C) C Fig.7 Typical gate charge vs. drain-to-source voltage Total gate charge , QG (nC) Fig.6 Typical source-drain diode forward voltage Fig.9 Maximum drain current vs. Case temperature 8 20 IRF830 Series 1000 750 500 250 0 0 8 16 24 32 12 4 0 101 0 10 1 10 5 4 3 2 1 0 25 50 75 100 125 150 0.6 0.4 1.0 1.2 0.8 101 0 10 40 16 0.1 10² 10³ 0.1 1 10 10² 4 10 www.nellsemi.com Page 4 of 7 1250 1500 Ciss Coss Crss C = ( ) iss C +C C = shorted gs gd ds V = 0V, GS f =1MHz C = C +C oss ds gd C = C rss gd V =0V GS 25°C 150°C V = 100V DS V = 250V DS V = 400V DS For test circuit See figure 13 I D = 3.1 A Operation in This Area is Limited by RDS(ON) 10µs 100µs 1ms 10ms - 10 ² Note: 1. T 2. T = 25°C C = 150°C J 3. Single Pulse |
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