FQD1N80TM datasheet(4/9 Pages) FAIRCHILD

No. de pieza	FQD1N80TM

Descripción Electrónicos	N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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FQD1N80 / FQU1N80 Rev. C2

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4

Typical Characteristics (Continued)

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes:

1. V

GS = 0 V

2. I

D = 250

μ

A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※

Notes :

1. V

GS = 10 V

2. I

D = 0.5 A

T

J, Junction Temperature [

oC]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

※

N o te s :

1 Z

.

θ

JC( t ) = 2. 78

℃

/W M a x .

2 . D u ty F a c to r, D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s ingle p uls e

D= 0 .5

0.0 2

0.2

0.0 5

0.1

0.0 1

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

T

C, Case Temperature [

℃

]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

DC

10 ms

1ms

100μ s

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

t

1 , S q uar e W av e P uls e D u r at i on [ s ec]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

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