2SC3357-T2 datasheet(2/8 Pages) NEC

No. de pieza	2SC3357-T2

Descripción Electrónicos	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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Fabricante Electrónico	NEC [NEC]

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2SC3357

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0

µA

VCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

µA

VEB = 1.0 V, IC = 0

DC Current Gain

hFE*

50

120

300

VCE = 10 V, IC = 20 mA

Gain Bandwidth Product

fT

6.5

GHz

VCE = 10 V, IC = 20 mA

Feed-Back Capacitance

Cre**

0.65

1.0

pF

VCB = 10 V, IE = 0, f = 1.0 MHz

Insertion Power Gain

S21e2

9dB

VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Noise Figure

NF

1.1

dB

VCE = 10 V, IC = 7 mA, f = 1.0 GHz

Noise Figure

NF

1.8

3.0

dB

VCE = 10 V, IC = 40 mA, f = 1.0 GHz

*

Pulse Measurement PW

≤ 350

µs, Duty Cycle ≤ 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.

hFE Classification

Class

RH

RF

RE

Marking

RH

RF

RE

hFE

50 to 100

80 to 160

125 to 250

TYPICAL CHARACTERISTICS (TA = 25

°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

2.0

1.0

0

50

100

150

TA-Ambient Temperature-

°C

0.3

0.5

1

2

0

0.5

1

2

5

10

20

30

VCB-Collector to Base Voltage-V

FEED-BACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

f = 1.0 MHz

Free Air

Rth(j-a) 312.5 ˚C/W

Ceramic Substrate

16 cm2

× 0.7 mm

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