BUK9K18-40E datasheet(4/13 Pages) NXP

No. de pieza	BUK9K18-40E

Descripción Electrónicos	Dual N-channel TrenchMOS logic level FET

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NXP Semiconductors

BUK9K18-40E

Dual N-channel TrenchMOS logic level FET

BUK9K18-40E

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Product data sheet

23 April 2013

4 / 13

003aaj668

10-2

10-1

1

10

102

103

10-3

10-2

10-1

1

10

tAL(ms)

IAL

(A)

(1)

(2)

(3)

Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 and

FET2

003aaj627

10-1

1

10

102

10-1

1

10

102

103

VDS (V)

ID

(A)

DC

100 ms

10 ms

1 ms

100 us

tp = 10 us

Limit RDSon = VDS / ID

Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance

from junction to

mounting base

Fig. 5

-

3.96

K/W

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