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BC847B Datasheet(PDF) 2 Page - Diodes Incorporated |
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BC847B Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 3 page DS30274 Rev. A-2 2 of 3 BC847AT, BT, CT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DC Current Gain (Note 3) Current Gain A B C Current Gain A B C hFE — — — 110 200 420 — 150 270 — 290 520 — — — 220 450 800 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —— 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 —mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Emitter Cutoff Current (Note 3) ICBO ICBO —— 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Output Capacitance COBO —— 4.5 pF VCB = 10V, f = 1.0MHz BC847BT Noise Figure BC847CT NF — — 10 4.0 dB VCE = 5V, RS = 2.0k W, f = 1.0kHz, BW = 200Hz Notes: 3. Short duration test pulse used to minimize self-heating effect. |
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Descripción similar - BC847B |
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