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IRF7341QTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7341QTRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET IRF7341QPbF www.irf.com 1 08/03/10 These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description SO-8 VDSS RDS(on) max ID 55V 0.050@VGS = 10V 5.1A 0.065@VGS = 4.5V 4.42A D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Benefits Absolute Maximum Ratings Parameter Max. Units VDS Drain-Source Voltage 55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.2 A IDM Pulsed Drain Current 42 PD @TA = 25°C Maximum Power Dissipation 2.4 W PD @TA = 70°C Maximum Power Dissipation 1.7 W Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 140 mJ IAR Avalanche Current 5.1 A EAR Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W PD - 96108A |
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