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MTBA5N10V8 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

No. de pieza MTBA5N10V8
Descripción Electrónicos  N-Channel Logic Level Enhancement Mode Power MOSFET
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Fabricante Electrónico  CYSTEKEC [Cystech Electonics Corp.]
Página de inicio  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTBA5N10V8 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C731V8
Issued Date : 2012.08.24
Revised Date :
Page No. : 5/9
MTBA5N10V8
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
NormalizedThreshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
ID=250μA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
0.001
0.01
0.1
1
10
ID, Drain Current(A)
VDS=5V
Pulsed
Ta=25°C
Gate Charge Characteristics
0
2
4
6
8
10
04
8
12
16
20
24
Total Gate Charge---Qg(nC)
ID=7A
VDS=80V
VDS=50V
VDS=20V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100μs
1s
RDS(ON
)
TA=25°C, Tj=150°, VGS=10V
RθJA=53°C/W, Single Pulse
Maximum Drain Current vs Case Temperature
0
1
2
3
4
5
6
7
8
9
25
50
75
100
125
150
175
TC, Case Temperature(°C)
VGS=10V, RθJC=7°C/W


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