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SBL530 Datasheet(Hoja de datos) 1 Page - Diodes Incorporated

No. de Pieza. SBL530
Descripción  5.0A SCHOTTKY BARRIER RECTIFIER
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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D
S23043 Rev. D-2
1 of 2
SBL530-SBL560
SBL530 - SBL560
5.0A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1
Pin 1
Pin 2
Pin 2
Case
TO-220AC
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53
Æ 4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
Voltage Drop
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: See Diagram
·
Weight: 2.3 grams (approx.)
·
Mounting Position: Any
·
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SBL
530
SBL
535
SBL
540
SBL
545
SBL
550
SBL
560
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
(Note 1)
@ TC = 95
°C
IO
5.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
175
A
Forward Voltage Drop
@ IF = 5.0A, TC = 25
°C
VFM
0.55
0.70
V
Peak Reverse Current
@TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 100
°C
IRM
0.5
33
mA
Typical Junction Capacitance (Note 2)
Cj
500
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
3
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.




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