2SC5185 datasheet(2/12 Pages) NEC

No. de pieza	2SC5185

Descripción Electrónicos	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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2SC5185

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

Collector Cutoff Current

ICBO

100

nA

VCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

100

nA

VEB = 1 V, IC = 0

DC Current Gain

hFE

70

140

VCE = 2 V, IC = 20 mA*1

Insertion Power Gain (1)

|S21e|2

811

dB

VCE = 2 V, IC = 20 mA, f = 2 GHz

Insertion Power Gain (2)

|S21e|2

7.5

9

dB

VCE = 1 V, IC = 10 mA, f = 2 GHz

Noise Figure (1)

NF

1.3

2.0

dB

VCE = 2 V, IC = 3 mA, f = 2 GHz

Noise Figure (2)

NF

1.3

2.0

dB

VCE = 1 V, IC = 3 mA, f = 2 GHz

Gain Bandwidth Product (1)

fT

10

13

GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

Gain Bandwidth Product (2)

fT

811

GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

Feed-Back Capacitance

Cre

0.3

0.6

pF

VCB = 2 V, IE = 0, f = 1 MHz*2

*1

Measured with pulses: Pulse width

≤ 350

µs, duty cycle ≤ 2 %, pulsed.

*2

Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal

of the bridge.

hFE Class

Class

FB

Marking

T86

hFE

70 to 140

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