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2SC5184-T2 Datasheet(PDF) 1 Page - NEC |
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2SC5184-T2 Datasheet(HTML) 1 Page - NEC |
1 / 12 page © 1994 DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Super Mini-Mold package EIAJ: SC-70 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 2SC5184-T1 3 000 units/reel Embossed tape, 8 mm wide, Pin No. 3 (collector) facing the perforations 2SC5184-T2 3 000 units/reel Embossed tape, 8 mm wide, Pins No. 1 (emitter) and No. 2 (base) facing the perforations Remark: Contact your NEC sales representative to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12108EJ2V0DS00 (2nd edition) (Previous No. TC-2481) Date Published November 1996 N Printed in Japan PACKAGE DIMENSIONS (Units: mm) 2.1 ± 0.1 1.25 ± 0.1 2 1 3 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector |
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