2SC5185-T1 datasheet(3/12 Pages) NEC

No. de pieza	2SC5185-T1

Descripción Electrónicos	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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Fabricante Electrónico	NEC [NEC]

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3

2SC5185

CHARACTERISTICS CURVES (TA = 25 ˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

200

100

0

50

100

150

90 mW

TA - Ambient Temperature - ˚C

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

50

40

30

20

10

0

0.5

1.0

VCE = 2 V

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

25

20

15

10

5

0

1.0

2.0

3.0

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ

IB = 20 A

µ

Passive Air

Cooling

VBE - Base to Emitter Voltage - V

VCE - Collector to Emitter Voltage - V

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

16

1

2

5

10

20

100

INSERTION POWER GAIN vs.

COLLECTOR CURRENT

14

1

2

5

10

20

100

14

12

10

8

6

4

2

2 V

VCE = 1 V

f = 2 GHz

12

10

8

6

4

2 V

VCE = 1 V

f = 2 GHz

30

IC - Collector Current - mA

I C - Collector Current - mA

IC - Collector Current - mA

DC CURRENT GAIN vs.

COLLECTOR CURRENT

500

200

100

10

20

50

1

2

5

10

20

50

100

VCE = 2 V

VCE = 1 V

Número de pieza similar - 2SC5185-T1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5185	196Kb / 21P	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Renesas Technology Corp	2SC5185	279Kb / 9P	NPN SILICON RF TRANSISTOR 2004

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Descripción similar - 2SC5185-T1

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NEC	2SC5180	54Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5184	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5177	56Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5186	58Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5181	50Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5179	57Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5182	56Kb / 12P	NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5183	60Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC5178	82Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
	2SC4225	41Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

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2SC5185-T1 Datasheet(PDF) 3 Page - NEC

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Número de pieza similar - 2SC5185-T1

Descripción similar - 2SC5185-T1

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