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IRF520S Datasheet(PDF) 4 Page - Vishay Siliconix |
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IRF520S Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91018 4 S11-1046-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF520S, SiHF520S Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 750 600 450 300 0 150 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91018_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 4 20 16 12 8 I D = 9.2 A For test circuit see figure 13 V DS = 20 V V DS = 50 V V DS = 80 V 91018_06 101 100 VSD, Source-to-Drain Voltage (V) 25 °C 175 °C V GS = 0 V 0.5 0.9 0.8 0.7 0.6 1.0 1.2 1.1 10-1 91018_07 102 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 0.1 103 0.1 2 5 1 2 5 10 2 5 2 5 25 1 25 10 25 102 25 103 91018_08 |
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