Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼

Delete All
ON OFF
ALLDATASHEET.ES

X  

Preview PDF Download HTML

2SC31418 Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. 2SC31418
Descripción  Bipolar Transistor
Descarga  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo 

2SC31418 Datasheet(HTML) 2 Page - ON Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
2SA1418 / 2SC3648
No.1788-2/7
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
DC Current Gain
hFE1VCE=(--)5V, IC=(--)100mA
100*
400*
hFE2VCE=(--)5V, IC=(--)10mA
90
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(11)8
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)250mA, IB=(--)25mA
(--0.2)0.12
(--0.5)0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)250mA, IB=(--)25mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(60)50
ns
Storage Time
tstg
(900)1000
ns
Fall Time
tf
(60)60
ns
* : The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1418S-TD-E
PCP
1,000pcs./reel
Pb Free
2SC3648S-TD-E
PCP
1,000pcs./reel
2SC3648T-TD-E
PCP
1,000pcs./reel
INPUT
100V
50Ω
100μF
470μF
--5V
IC=20IB1=--20IB2=300mA
(For PNP, the polarity is reversed)
+
+
VR
PW=20μs
D.C.≤1%
333Ω
RB
IB1
IB2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


Html Pages

1  2  3  4  5  6  7 


Datasheet Download




Enlace URL




Privacy Policy
ALLDATASHEET.ES
Does ALLDATASHEET help your business so far?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn