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2N7002KDW Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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2N7002KDW Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 6 page PAGE . 1 May 21.2010-REV.01 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected Maximum RATINGS and Thermal Characteristics (T A=25 O C unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE PA RA ME TE R S ymbol Li mi t Uni ts D rai n-S ource Voltage V DS 60 V Gate-S ource Voltage V GS +20 V C onti nuous D rai n C urrent I D 115 mA P ulsed D rai n C urrent 1) I DM 800 mA Maxi mum P ower D i ssi pati on T A =2 5 O C T A =7 5 O C P D 200 120 mW Operati ng Juncti on and S torage Temperature Range T J,TSTG -55 to + 150 O C Junction-to Ambient Thermal Resistance(PCB mounted)2 R θ JA 625 O C/W 1 2 3 6 5 4 1 2 3 6 5 4 1 2 3 6 5 4 FEATURES • R DS(ON), VGS@10V,IDS@500mA=3Ω • R DS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) 0.010(0.25) Unit inch(mm) : SOT-363 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.074(1.90) 0.030(0.75) 0.021(0.55) 0.056(1.40) 0.047(1.20) 0.012(0.30) 0.005(0.15) 0.010(0.25) 0.003(0.08) MECHANICALDATA • Case: SOT-363 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Approx. Weight: 0.0002 ounces, 0.006 grams • Marking : K27 |
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