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SCG2019 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. SCG2019
Descripción  P-Channel Enhancement Mode MOSFET
Descarga  4 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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SCG2019 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

   
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Any changes of specification will not be informed individually.
Elektronische Bauelemente
SCG2019
-0.62A , -20V , RDS(ON) 810 mΩ
P-Channel Enhancement Mode MOSFET
12-Mar-2013 Rev. A
Page 1 of 4
P9
= Date Code
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
MECHANICAL DATA
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
APPLICATION
DC-DC converter circuit
Load Switch
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-523
3K
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Rating
Parameter
Symbol
10S
Steady State
Unit
Drain – Source Voltage
VDS
-20
V
Gate – Source Voltage
VGS
±5
V
TA= 25°C
-0.73
-0.62
Continuous Drain Current
1
TA= 70°C
ID
-0.58
-0.5
A
TA= 25°C
0.38
0.28
Power Dissipation
1
TA= 70°C
PD
0.24
0.18
W
TA= 25°C
-0.61
-0.55
Continuous Drain Current
2
TA= 70°C
ID
-0.49
-0.44
A
TA= 25°C
0.27
0.22
Power Dissipation
2
TA= 70°C
PD
0.17
0.14
W
Pulsed Drain Current
3
IDM
-1.2
A
Lead Temperature
TL
260
°C
Operating Junction & Storage Temperature Range
TJ, TSTG
150, -55~150
°C
SOT-523
Top View
A
L
M
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.5
1.7
G
-
0.1
B
1.45
1.75
H
0.55 REF.
C
0.7
0.9
J
0.1
0.2
D
0.7
0.9
K
-
E
0.9
1.1
L
0.5 TYP.
F
0.15
0.35
M
0.25
0.325
Top View


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