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SMG5402 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. SMG5402
Descripción  N-Channel Enhancement Mode MOSFET
Descarga  4 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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SMG5402 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

   
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Any changes of specification will not be informed individually.
SMG5402
4A , 30V , RDS(ON) 55 mΩ
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
26-Oct-2012 Rev. A
Page 1 of 4
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
SC-59
TOP VIEW
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG5406 is universally used for all commercial-industrial
applications.
FEATURES
Simple Drive Requirement
Small Package Outline
MARKING
5402
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
3 , V
GS@4.5V
TA=25°C
ID
4
A
TA=70°C
3
Pulsed Drain Current
1,2
IDM
16
A
Power Dissipation
TA=25°C
P D
1.38
W
Linear Derating Factor
0.01
W / °C
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RθJA
90
°C / W
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.70
3.10
G
0.10 REF.
B
2.25
3.00
H
0.40 REF.
C
1.30
1.70
J
0.10
0.20
D
1.00
1.40
K
0.45
0.55
E
1.70
2.30
L
0.85
1.15
F
0.35
0.50


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