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NE202930 Datasheet(PDF) 2 Page - California Eastern Labs |
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NE202930 Datasheet(HTML) 2 Page - California Eastern Labs |
2 / 7 page NE202930 R09DS0003EJ0100 Rev.1.00 Page 2 of 6 Jul 14, 2010 ELECTRICAL CHARACTERISTICS (TA = +25 °C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 100 nA DC Current Gain hFE Note1 VCE = 5 V, IC = 5 mA 85 140 205 − RF Characteristics Gain Bandwidth Product fT VCE = 5 V, IC = 30 mA, f = 1 GHz − 11.0 − GHz Insertion Power Gain ⏐S21e⏐ 2 VCE = 5 V, IC = 30 mA, f = 1 GHz 11.5 13.5 − dB Noise Figure (1) NF1 VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω − 1.15 1.5 dB Noise Figure (2) NF2 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 1.5 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω 10.0 12.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 13.5 − dB Reverse Transfer Capacitance Cre Note 2 VCB = 5 V, IE = 0, f = 1 MHz − 0.6 0.8 pF Maximum Stable Power Gain MSG Note 3 VCE = 5 V, IC = 30 mA, f = 1 GHz 13.5 15.5 − dB Gain 1 dB Compression Output Power PO (1 dB) VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 19 − dBm Output 3rd Order Intercept Point OIP3 VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt − 32 − dBm Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = hFE CLASSIFICATION Rank YFB Marking R7D hFE Value 85 to 205 S21 S12 A Business Partner of Renesas Electronics Corporation. |
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