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IRF-634 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza IRF-634
Descripción Electrónicos  N-channel 250V - 0.38廓 - 8A TO-220 /TO-220FP Mesh Overlay??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IRF-634 Datasheet(HTML) 4 Page - STMicroelectronics

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Obsolete
Product(s)
- Obsolete
Product(s)
Electrical characteristics
IRF634 - IRF634FP
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
250
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 4 A
0.38
0.45
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS > ID(on) x RDS(on)max,
ID =4A
78
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
770
118
48
pF
pF
td(on)
tr
td(Voff)
tf
Turn-on delay time
Rise time
Turn-off- delay time
Fall time
VDD = 125V, ID = 4A
RG =4.7Ω VGS = 10V
13
18
51
16
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 200V, ID = 8A,
VGS = 10V
37
5.2
14.8
51.8
nC
nC
nC


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