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SI7635DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7635DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 65021 S11-1141-Rev. B, 13-Jun-11 www.vishay.com 3 Vishay Siliconix Si7635DP This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.0020 0.0035 0.0050 0.0065 0.0080 014 28 42 56 70 VGS =4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 020 40 60 80 100 VDS =10 V VDS =5 V ID =20A VDS =16 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 1500 3000 4500 6000 7500 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 ID =26A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) |
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