FQPF6N90CT datasheet(7/10 Pages) FAIRCHILD

No. de pieza	FQPF6N90CT

Descripción Electrónicos	N-Channel QFET짰 MOSFET 900 V, 6.0 A, 2.3 廓

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Type

as DUT

VGS

• dv/dt controlled by RG

•ISD controlled by pulse period

VDD

L

I SD

10V

VGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

+

_

Driver

RG

Same Type

as DUT

VGS

• dv/dt controlled by RG

•ISD controlled by pulse period

VDD

LL

I SD

10V

VGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width

Gate Pulse Period

--------------------------

D =

Gate Pulse Width

Gate Pulse Period

--------------------------

FQP6N90C / FQPF6N90C Rev. C1

www.fairchildsemi.com

7

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FQPF6N90CT Datasheet(PDF) 7 Page - Fairchild Semiconductor

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