HB52F649E1 datasheet(9/16 Pages) ELPIDA

No. de pieza	HB52F649E1

Descripción Electrónicos	512 MB Registered SDRAM DIMM 64-Mword 횞 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 횞 4 Components) PC133SDRAM

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Fabricante Electrónico	ELPIDA [Elpida Memory]

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9 / 16 page

HB52F649E1-75B

Data Sheet E0021H10

9

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to V

SS

V

T

–0.5 to V

CC + 0.5

(

≤ 4.6 (max))

V1

Supply voltage relative to V

SS

V

CC

–0.5 to +4.6

V

1

Short circuit output current

Iout

50

mA

Power dissipation

P

T

18.0

W

Operating temperature

Topr

0 to +55

°C

Storage temperature

Tstg

–50 to +100

°C

Note:

1. Respect to V

SS

DC Operating Conditions (Ta = 0 to +55°C)

Parameter

Symbol

Min

Max

Unit

Notes

Supply voltage

V

CC

3.0

3.6

V

1, 2

V

SS

00V

3

Input high voltage

V

IH

2.0

V

CC

V

1, 4

Input low voltage

V

IL

0

0.8

V

1, 5

Notes: 1. All voltage referred to V

SS

2. The supply voltage with all VCC pins must be on the same level.

3. The supply voltage with all VSS pins must be on the same level.

4. V

IH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC.

5. V

IL (min) = VSS − 2.0 V for pulse width ≤ 3 ns at VSS.

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