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STP80N70F6 Datasheet(PDF) 7 Page - STMicroelectronics |
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STP80N70F6 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 13 page STP80N70F6 Electrical characteristics Doc ID 023433 Rev 1 7/13 Figure 8. Capacitance variations Figure 9. Normalized BVDSS vs temperature Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics C 3000 2000 1000 0 0 40 VDS(V) (pF) 20 60 Ciss Coss Crss 4000 5000 6000 7000 AM15425v1 VDS -75 -25 TJ(°C) (norm) -50 50 0 25 75 0.8 0.85 0.9 0.95 1 1.05 ID = 1mA 100 125150 1.1 AM15428v1 VGS(th) 0.6 0.4 0.2 0 -75 -25 TJ(°C) (norm) -50 0.8 50 0 25 75 100 1 ID=250 µA 125 150 1.2 AM15426v1 RDS(on) 1.5 1 0.5 0 ID(A) 2 VGS=10V (norm) -75 -25 -50 50 0 25 75 100 125 150 AM15424v1 VSD 0 20 ISD(A) (V) 10 30 0.4 0.5 0.6 0.7 0.8 0.9 TJ=-50°C TJ=150°C TJ=25°C 40 50 60 70 80 1 AM15421v1 |
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