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2N5089 Datasheet(PDF) 2 Page - Continental Device India Limited |
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2N5089 Datasheet(HTML) 2 Page - Continental Device India Limited |
2 / 4 page ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N5088/89 DESCRIPTION SYMBOL Min Max UNITS DC Current Gain hFE IC=100uA,VCE=5V 2N5088 300 900 2N5089 400 1200 IC=1mA,VCE=5V 2N5088 350 - 2N5089 450 - IC=10mA,VCE=5V* 2N5088 300 - 2N5089 400 - Collector Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1.0mA - 0.5 V Base Emitter on Voltage VBE(on) * IC=10mA,VCE=5V - 0.8 V DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ft IC=500uA,VCE=5V >50 - MHz f=20MHz Collector-Base Capacitance Ccb VCB=5V, f=100kHz - <4.0 pF Emitter-Base Capacitance Ceb VEB=0.5V, f=100kHz - <10 pF Small Signal Current Gain hfe IC=1mA, VCE=5V 2N5088 350 1400 f=1kHz 2N5089 450 1800 Noise Figure NF IC=100uA, VCE=5V, 2N5088 -3.0 dB Rs=10kohms, f=10Hz 2N5089 -2.0 dB to 15.7 kHz *Pulsed: pulse Duration =300us, Duty Cycle=2% (1)Rth (j-a) is measured with the device soldered into a typical printed circuit board. Continental Device India Limited Data Sheet Page 2 of 4 |
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Descripción similar - 2N5089 |
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