December 2013

Thermal Characteristics

FQU20N06L

60 V, 17.2 A, 42 mΩ

Description

©2009 Fairchild Semiconductor Corporation

FQU20N06L Rev. C3

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, audio amplifier,

DC motor control, and variable switching power applications.

Features

• Low Gate Charge (Typ. 9.5 nC)

• Low Crss (Typ. 35 pF)

• 100% Avalanche Tested

Symbol

Parameter

FQU20N06LTU

Unit

Thermal Resistance, Junction to Case, Max.

3.28

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

50

Symbol

Parameter

FQU20N06LTU

Unit

Drain-Source Voltage

60

V

Drain Current

17.2

A

10.9

A

Drain Current

- Pulsed

(Note 1)

68.8

A

Gate-Source Voltage

± 20

V

Single Pulsed Avalanche Energy

(Note 2)

170

mJ

Avalanche Current

(Note 1)

17.2

A

Repetitive Avalanche Energy

(Note 1)

3.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

2.5

W

38

W

- Derate above 25°C

0.30

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering,

1/8" from case for 5 seconds.

300

°C

•

Low Level Gate Drive Requirements Allowing Direct

Operation Form Logic Drivers

GD

S

I-PAK

G

S

D