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IRF840LCS Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza IRF840LCS
Descripción Electrónicos  Power MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
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IRF840LCS Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91068
www.vishay.com
S11-1050-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness
and
reliability
that
characterize
Power
MOSFETs offer the designer a new power transistor
standard for switching applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD  8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.
PRODUCT SUMMARY
VDS (V)
500
RDS(on) ()VGS = 10 V
0.85
Qg (Max.) (nC)
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free and Halogen-free
SiHF840LCS-GE3
SiHF840LCL-GE3
Lead (Pb)-free
IRF840LCSPbF
IRF840LCLPbF
SiHF840LCS-E3
SiHF840LCL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
8.0
A
TC = 100 °C
5.1
Pulsed Drain Currenta, e
IDM
28
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb, e
EAS
510
mJ
Avalanche Currenta
IAR
8.0
A
Repetiitive Avalanche Energya
EAR
13
mJ
Maximum Power Dissipation
TC = 25 °C
PD
125
W
TA = 25 °C
3.1
Peak Diode Recovery dV/dtc, e
dV/dt
3.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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