IRL2203NSPbF

IRL2203NLPbF

10/01/10

www.irf.com

1

‡

S

D

G

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

die sizes up to HEX-4. It provides the highest power capability and the lowest

is suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL2203NL) is available for low-profile applications.

Description

TO-262

IRL2203NLPbF

IRL2203NSPbF

Absolute Maximum Ratings

Symbol

Parameter

Units

A

Pulsed Drain Current

™

W

W

Linear Derating Factor

W/°C

Gate-to-Source Voltage

V

Avalanche Current

Ù

A

Repetitive Avalanche Energy

™

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Symbol

Parameter

Typ

Max

Units

Junction-to-Case

k

–––

0.85

Junction-to-Ambient (PCB mount, steady state)

jk

–––

40

°C/W

300 (1.6mm from case)

5.0

°C

-55 to + 175

3.8

18

60

180

1.2

± 16

Max

116

i

82

400

PD - 95219A