BD239C datasheet(2/3 Pages) CDIL

No. de pieza	BD239C

Descripción Electrónicos	PLASTIC POWER TRANSISTORS

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Fabricante Electrónico	CDIL [Continental Device India Limited]

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2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current

IC

max.

2.0

A

Collector current (Peak value)

ICM

max.

4.0

A

Base current

IB

max.

0.6

A

Total power dissipation upto TA=25°C

Ptot

max.

2.0

W

Derate above 25°C

max.

0.016

W/°C

Total power dissipation upto TC=25°C

Ptot

max.

30

W

Derate above 25°C

max.

0.24

W/°C

Junction temperature

Tj

max.

150

°C

Storage temperature

Tstg

–65 to +150

ºC

THERMAL RESISTANCE

From junction to case

Rth j–c

4.167

°C/W

From junction to ambient

Rth j–a

62.5

°C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

239 239A 239B 239C

240 240A 240B 240C

Collector cutoff current

IB = 0; VCE = 30 V

ICEO

max. 0.3

0.3

–

mA

IB = 0; VCE = 60 V

ICEO

max. –

–

0.3

mA

VBE = 0; VCE = VCEO

ICES

max.

0.2

mA

Emitter cut-off current

IC = 0; VEB = 5 V

IEBO

max.

1.0

mA

Breakdown voltages

IC = 30 mA; IB = 0

VCEO(sus)* min. 45

60

80

100

V

IC = 1 mA; IE = 0

VCBO

min. 55

70

90

115

V

IE = 1 mA; IC = 0

VEBO

min.

5.0

V

Saturation voltage

IC = 1 A; IB = 0.2 A

VCEsat*

max.

0.7

V

Base emitter on voltage

IC = 1 A; VCE = 4 V

VBE(on)* max.

1.3

V

D.C. current gain

IC = 0.2 A; VCE = 4 V

hFE*

min.

40

IC = 1 A; VCE = 4 V

hFE*

min.

15

Small signal current gain

IC = 0.2 A; VCE = 10 V; f = 1 KHz

hfe

min.

20

Transition frequency

IC = 0.2 A; VCE = 10 V; f = 1 MHz

fT (1)

min.

3

MHz

* Pulse test: pulse width

≤ 300 µs; duty cycle ≤ 2%

(1) fT = |hfe|• ftest

BD239, BD239A, BD239B, BD239C

BD240, BD240A, BD240B, BD240C

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