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BCW60A Datasheet(PDF) 2 Page - Continental Device India Limited |
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BCW60A Datasheet(HTML) 2 Page - Continental Device India Limited |
2 / 3 page Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) VCES max. 32 V Collector–emitter voltage (open base) VCE0 max. 32 V Emitter–base voltage (open collector) VEB0 max. 5 V Collector current (d.c.) IC max. 200 mA Base current IB max. 50 mA Total power dissipation up to Tamb: 25 °C Ptot max. 250 mW Storage temperature Tstg –55 to +150° C Junction temperature Tj max. 150 ° C THERMAL RESISTANCE From junction to ambient* Rth j–a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter cut–off current VBE = 0; VCE = 32 V ICES <20 nA VBE = 0; VCE = 32V; Tamb = 150°C ICES <20 mA Emitter–base cut–off current IC = 0; VEB = 4 V IEB0 <20 nA Saturation voltages at IC = 10 mA; IB = 0,25 mA VCEsat 0,05 to 0,35 V VBEsat 0,6 to 0,85 V at IC = 50 mA; IB = 1,25 mA VCEsat 0,1 to 0,55 V VBEsat 0,7 to 1,05 V Transition frequency at f = 100 MHz · > 125 MHz IC = 10 mA; VCE = 5 V fT typ. 250 MHz Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 10V Cc typ. 2,5 pF Emitter capacitance at f = 1 MHz IC = Ic = 0; VEB = 0,5 V Ce typ. 8 pF Noise figure at RS = 2 kW typ. 2 dB IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz F < 6 dB BCW60A 60B 60C 60D D.C. current gain VCE = 5 V; IC = 10 mAhFE > – 20 40 100 VCE = 5 V; IC: 2 mA hFE > 120 180 250 380 < 220 310 460 630 VCE = 1 V; IC: 50 mA hFE > 50 70 90 100 Input impedance VCE = 5 V; IC = 2 mA, f = 1 kHz hie typ. 2,7 3,6 4,5 7,5 kW BCW60A BCW60B BCW60C BCW60D |
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Descripción similar - BCW60A |
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