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SI1039X-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI1039X-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 70682 S10-2544-Rev. D, 08-Nov-10 www.vishay.com 3 Vishay Siliconix Si1039X TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.0 0.1 0.2 0.3 0.4 0.5 01234 ID - Drain Current (A) VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0 1 2 3 4 5 0 1234 5 VDS = 6 V ID = 0.87 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 4 1 0.1 VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 200 400 600 800 0 246 8 10 12 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 0.87 A TJ - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0 1234 5 ID = 0.87 A VGS - Gate-to-Source Voltage (V) ID = 0.2 A |
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