Typical values (unless otherwise specified)

Notes:

 Click on this section to link to the appropriate technical paper.

‚ Click on this section to link to the DirectFET Website.

DirectFET

™ ISOMETRIC

Description

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance

by 80%.

MX

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)



DirectFET® P-Channel Power MOSFET

‚

no Bromide and no Halogen

High Level of Integration and Very Low RDS(on)

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Features and Benefits

Applications

2

4

6

8

10

12

14

16

18

20

-VGS, Gate -to -Source Voltage (V)

0

2

4

6

8

10

12

ID = -22A

TJ = 25°C

TJ = 125°C

0

20

40

60

80 100 120 140 160 180

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= -24V

VDS= -15V

VDS= -6.0V

ID= -18A

-30V max ±20V max 2.3m

Ω@-10V 3.8mΩ@-4.5V

67nC

29nC

9.4nC

315nC

59nC

-1.8V

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

e

Pulsed Drain Current

g

V

A

Max.

-17

-160

-180

±20

-30

-22

DD

G

S

S

SQ

SX

ST

MQ

MX

MT

MP

MC

IRF9383MPbF

1

Submit Datasheet Feedback

February 28, 2014

Note

Form

Quantity

IRF9383MTRPbF

DirectFET Medium Can

Tape and Reel

4800

IRF9383MTR1PbF

DirectFET Medium Can

Tape and Reel

1000

"TR1" suffix EOL notice #264

Orderable part number

Package Type

Standard Pack