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IRF9383MTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF9383MTRPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page Typical values (unless otherwise specified) Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. DirectFET ISOMETRIC Description The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET® P-Channel Power MOSFET l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, no Bromide and no Halogen l Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Features and Benefits Applications l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications 2 4 6 8 10 12 14 16 18 20 -VGS, Gate -to -Source Voltage (V) 0 2 4 6 8 10 12 ID = -22A TJ = 25°C TJ = 125°C 0 20 40 60 80 100 120 140 160 180 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= -24V VDS= -15V VDS= -6.0V ID= -18A VDSS VGS RDS(on) RDS(on) -30V max ±20V max 2.3m Ω@-10V 3.8mΩ@-4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 67nC 29nC 9.4nC 315nC 59nC -1.8V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g V A Max. -17 -160 -180 ±20 -30 -22 DD G S S SQ SX ST MQ MX MT MP MC IRF9383MPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 28, 2014 Note Form Quantity IRF9383MTRPbF DirectFET Medium Can Tape and Reel 4800 IRF9383MTR1PbF DirectFET Medium Can Tape and Reel 1000 "TR1" suffix EOL notice #264 Orderable part number Package Type Standard Pack |
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