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STB200N6F3 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STB200N6F3
Descripción Electrónicos  N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB200N6F3 Datasheet(HTML) 5 Page - STMicroelectronics

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STB200N6F3, STI200N6F3, STP200N6F3
Electrical characteristics
Doc ID 15606 Rev 2
5/16
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
-
120
480
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=120 A, VGS=0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs,
VDD=48 V, Tj=150 °C
(see
Figure 17)
-
67
177.6
5.3
ns
nC
A


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