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2SK3270-01 Datasheet(Hoja de datos) 1 Page - Fuji Electric

No. de Pieza. 2SK3270-01
Descripción  N-channel MOS-FET
Descarga  2 Pages
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Fabricante  FUJI [Fuji Electric]
Página de inicio  http://www.fujielectric.co.jp/eng/fdt/scd
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2SK3270-01
N-channel MOS-FET
Trench Gate MOSFET
60V
6,5m
±80A 135W
> Features
> Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
60
V
Continous Drain Current
I D
±80
A
Pulsed Drain Current
I D(puls)
±320
A
Gate-Source-Voltage
VGS
+30 / -20
V
Maximum Avalanche Energy
E AV
613
mJ*
Max. Power Dissipation
P D
135
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
* L=0,13mH, VCC=24V
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
60
V
Gate Threshhold Voltage
V GS(th)
ID=10mA
VDS=VGS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
1,0
100,0
µA
VGS=0V
Tch=125°C
10,0
500,0
µA
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=10V
5,0
6,5
m
Forward Transconductance
g fs
ID=40A
VDS=10V
25
50
S
Input Capacitance
C iss
VDS=25V
9000
pF
Output Capacitance
C oss
VGS=0V
1250
pF
Reverse Transfer Capacitance
C rss
f=1MHz
700
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
50
ns
t r
VGS=10V
200
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
ID=80A
150
ns
t f
RGS=10 Ω
135
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
80
A
Diode Forward On-Voltage
V SD
IF=80A VGS=0V Tch=25°C
1,0
1,5
V
Reverse Recovery Time
t rr
IF=50A VGS=0V
85
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
0,25
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-a)
channel to ambient
75,0
°C/W
R th(ch-c)
channel to case
0,926
°C/W




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