BUT11ATU datasheet(2/4 Pages) FAIRCHILD

No. de pieza	BUT11ATU

Descripción Electrónicos	High Voltage Power Switching Applications

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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2 / 4 page

Rev. B1, August 2001

Typical Characteristics

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter Saturation Voltage

Figure 4. Reverse Biased Safe OPerating Area

Figure 5. Safe Operating Area

Figure 6. Power Derating

0.01

0.1

1

10

1

10

100

1000

VCE = 5V

IC[A], COLLECTOR CURRENT

0.01

0.1

1

10

0.01

0.1

1

10

IC = 5 IB

VCE(sat)

IC[A], COLLECTOR CURRENT

0.01

0.1

1

10

0.01

0.1

1

10

IC = 5 IB

VBE(sat)

IC[A], COLLECTOR CURRENT

0

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1200

0

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BUT11A

BUT11

VCE[V], COLLECTOR-EMITTER VOLTAGE

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10

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1000

0.01

0.1

1

10

Ic MAX (Continuous)

BUT11A

BUT11

VCE[V], COLLECTOR-EMITTER VOLTAGE

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125

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175

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TC[

O

C], CASE TEMPERATURE

Número de pieza similar - BUT11ATU

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	BUT11A	96Kb / 12P	Silicon diffused power transistors 1997 Aug 13
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STMicroelectronics	BUT11A	77Kb / 5P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Inchange Semiconductor ...	BUT11A	162Kb / 3P	isc Silicon NPN Power Transistor

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BUT11ATU Datasheet(PDF) 2 Page - Fairchild Semiconductor

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