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2SK2512 Datasheet(PDF) 1 Page - NEC |
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2SK2512 Datasheet(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS (on)1 = 15 m Ω (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 m Ω (VGS = 4 V, ID = 23 A) • Low Ciss Ciss = 2 100 pF TYP. • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±45 A Drain Current (pulse)* ID(pulse) ±180 A Total Power Dissipation (Tc = 25 ˚C) PT1 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 10 µs, Duty Cycle ≤ 1 % The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE © 1995 DATA SHEET Document No. D10291EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan PACKAGE DIMENSIONS (in millimeter) 10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2 2.5±0.1 1.3±0.2 1.5±0.2 2.54 0.7±0.1 2.54 0.65±0.1 123 1. Gate 2. Drain 3. Source MP-45F (ISOLATED TO-220) Body Diode Source Drain Gate Gate Protection Diode |
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