Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
BUH515 Datasheet(PDF) 2 Page - Savantic, Inc. |
|
BUH515 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUH515 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 Tj=125 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=5A ; VCE=5V 6 12 Switching times ts Storage time 2.7 3.9 µs tf Fall time IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V 190 280 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 2.5 /W |
Número de pieza similar - BUH515 |
|
Descripción similar - BUH515 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |