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BC846 Datasheet(PDF) 1 Page - ON Semiconductor |
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BC846 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 13 page © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 10 1 Publication Order Number: BC846AWT1/D BC846, SBC846, BC847, SBC847, BC848 Series General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846, SBC846 BC847, SBC847 BC848 VCEO 65 45 30 V Collector-Base Voltage BC846, SBC846 BC847, SBC847 BC848 VCBO 80 50 30 V Emitter-Base Voltage BC846, SBC846 BC847, SBC847 BC848 VEBO 6.0 6.0 5.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C PD 150 mW Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W Junction and Storage Temperature TJ, Tstg − 55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in. http://onsemi.com SC−70/SOT−323 CASE 419 STYLE 3 MARKING DIAGRAM XX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) XX M G G COLLECTOR 3 1 BASE 2 EMITTER 1 2 3 See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. ORDERING INFORMATION |
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